inchange semiconductor isc product specification 1 isc website www.iscsemi.cn isc silicon npn power transistor 3DD102A description collector-emitter breakdown voltage- : v (br)ceo = 100v(min.) dc current gain- : h fe = 20(min.)@i c = 2a collector-emitter saturation voltage- : v ce(sat )= 0.8v(max)@ i c = 2.5a applications designed for power amplifier,dc-dc converter and regulated power supply applications. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.0 /w symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 4 v i c collector current-continuous 5 a p c collector power dissipation@t c =75 50 w t j junction temperature 175 t stg storage temperature -55~175
inchange semiconductor isc product specification 2 isc website www.iscsemi.cn isc silicon npn power transistors 3DD102A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma; i b = 0 100 v v (br)cbo collector-base breakdown voltage i c = 5ma; i e = 0 150 v v (br)ebo emitter-base breakdown voltage i e = 5ma; i c = 0 4 v v ce (sat) collector-emitter saturation voltage i c = 2.5a; i b = 0.25a 0.8 v i ceo collector cutoff current v ce = 50v; i b =0 2.0 ma i cbo collector cutoff current v cb = 50v; i e =0 1.0 ma h fe dc current gain i c = 2a; v ce = 5v 20 f t current gain-bandwidth product i c = 0.5a; v ce = 12v 1 mhz
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